3Inch R-axis 76.2mm Al2O3 Sapphire Crystal Wafers Custom Sapphire Glass SSP 0.43mm
| Type of posting | Offer |
| Category | Other Measuring & Analysing Instruments |
| City / Port | Shanghai, CN, China |
| Description | 2inch /3inch 4inch /5inch C-axis/ a-axis/ r-axis/ m-axis 6"/6inch dia150mm C-plane Sapphire SSP/DSP wafers with 650um/1000um Thickness About synthetic sapphire crystal Sapphire Properties GENERAL Chemical Formula Al2O3 Crystal Stucture Hexagonal System ((hk o 1) Unit Cell Dimension a=4.758 Å,Å c=12.991 Å, c:a=2.730 PHYSICAL Metric English (Imperial) Density 3.98 g/cc 0.144 lb/in3 Hardness 1525 - 2000 Knoop, 9 mhos 3700° F Melting Point 2310 K (2040° C) STRUCTURAL Tensile Strength 275 MPa to 400 MPa 40,000 to 58,000 psi at 20° 400 MPa 58,000 psi (design min.) at 500° C 275 MPa 40,000 psi (design min.) at 1000° C 355 MPa 52,000 psi (design min.) Flexural Stength 480 MPa to 895 MPa 70,000 to 130,000 psi Compression Strength 2.0 GPa (ultimate) 300,000 psi (ultimate) The Kyropoulos process (KY process) for sapphire crystal growth is currently used by many companies in China to produce sapphire for the electronics and optics industries. High-purity, aluminum oxide is melted in a crucible at over 2100 degrees Celsius. Typically the crucible is made of tungsten or molybdenum. A precisely oriented seed crystal is dipped into the molten alumina. The seed crystal is slowly pulled upwards and may be rotated simultaneously. By precisely controlling the temperature gradients, rate of pulling and rate of temperature decrease, it is possible to produce a large, single-crystal, roughly cylindrical ingot from the melt. After single crystal sapphire boules are grown, they are core-drilled into cylindrical rods, The rods are sliced up into the desired window thickness and finally polished to the desired surface finish. 3Inch R-axis 76.2mm Al2O3 Sapphire Crystal Wafers Custom Sapphire Glass SSP 0.43mm 0 |
| Date | 2022 Jan 7, 09:01 |
